MRF5S9150HR3 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 869
to 960 MHz. Suitable for multicarrier amplifier applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V_DD = 28 Volts,
I_DQ = 1500 mA, P_out = 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.7 dB
Drain Efficiency — 28.4%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF5S9150H
Rev. 1, 5/2006
MRF5S9150HR3
MRF5S9150HSR3
880 MHz, 33 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S9150HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S9150HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
T_stg
T_C
T_J
Symbol
- 0.5, +68
- 0.5, +15
- 65 to +150
150
200
Value ⁽¹⁾
Thermal Resistance, Junction to Case
Case Temperature 80°C, 150 W CW
Case Temperature 76°C, 33 W CW
R_θJC
0.34
0.34
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9150HR3 MRF5S9150HSR3
1