MRF6V2300NR1_08 Datasheet, PDF (8/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 5 Ω
Z_source
f = 220 MHz
Z_load
f = 220 MHz
V_DD = 50 Vdc, I_DQ = 900 mA, P_out = 300 W CW
f
MHz
Z_source
W
Z_load
W
220
1.23 + j3.69
2.43 + j2.04
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6V2300NR1 MRF6V2300NBR1
8
RF Device Data
Freescale Semiconductor