MRF6V2300NR1_08 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
28
26
24
50 V
22
45 V
40 V
20
35 V
18
30 V
25 V
16
V_DD = 20 V
I_DQ = 900 mA
f = 220 MHz
14
0 50 100 150 200 250 300 350 400
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
60
T_C = −30_C
55
25_C
85_C
50
45
V_DD = 50 Vdc
40
I_DQ = 900 mA
f = 220 MHz
35
10
15
20
25
30
35
P_in, INPUT POWER (dBm)
Figure 11. Power Output versus Power Input
29
28
27
G_ps
T_C = −30_C
26
25_C
25
85_C
80
25_C
85_C
70
−30_C ₆₀
50
40
24
30
η_D
23
22
5
10
V_DD = 50 Vdc
I_DQ = 900 mA
f = 220 MHz
100
20
10
600
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
25
65
24
60
23
55
G_ps
22
50
21 η_D
20
19
45
40
−28
35
−29
18 IMD3
30
−30
17
25
−31
16
V_DD = 50 V, P_out = 300 W (Peak)
15
I_DQ = 1100 mA, Tone−Spacing = 100 kHz
20
−32
15
−33
160 170 180 190 200 210 220 230 240
f, FREQUENCY (MHz)
Figure 13. VHF Broadcast Broadband Performance
MRF6V2300NR1 MRF6V2300NBR1
6
RF Device Data
Freescale Semiconductor