MRF6V2300NR1_08 Datasheet, PDF (2/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
R_θJC
0.24
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 50 Vdc, V_GS = 0 Vdc)
Drain- Source Breakdown Voltage
(I_D = 150 mA, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
2.5
I_DSS
—
—
50
V_(BR)DSS
110
—
—
I_GSS
—
—
10
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 800 μAdc)
Gate Quiescent Voltage
(V_DD = 50 Vdc, I_D = 900 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
V_GS(th)
1
1.63
3
V_GS(Q)
1.5
2.6
3.5
V_DS(on)
—
0.28
—
Dynamic Characteristics
Reverse Transfer Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
2.88
—
Output Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
120
—
Input Capacitance
(V_DS = 50 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C_iss
—
268
—
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 900 mA, P_out = 300 W, f = 220 MHz, CW
Power Gain
G_ps
24
25.5
27
Drain Efficiency
η_D
66
68
—
Input Return Loss
IRL
—
- 16
-9
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
Unit
°C
Unit
mA
μAdc
Vdc
μAdc
Vdc
Vdc
Vdc
pF
pF
pF
dB
%
dB
ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
MRF6V2300NR1 MRF6V2300NBR1
2
RF Device Data
Freescale Semiconductor