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MRF6V2300NR1_08 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
⢠Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA,
Pout = 300 Watts, f = 220 MHz
Power Gain â 25.5 dB
Drain Efficiency â 68%
⢠Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Output Power
Features
⢠Integrated ESD Protection
⢠Excellent Thermal Stability
⢠Facilitates Manual Gain Control, ALC and Modulation Techniques
⢠200°C Capable Plastic Package
⢠RoHS Compliant
⢠In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6V2300N
Rev. 3, 1/2008
MRF6V2300NR1
MRF6V2300NBR1
10 - 600 MHz, 300 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2300NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2300NBR1
PARTS ARE SINGLE - ENDED
Table 1. Maximum Ratings
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Rating
© Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RFin/VGS
RFout/VDS
RFin/VGS
RFout/VDS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Symbol
VDSS
VGS
Tstg
TC
TJ
Value
- 0.5, +110
- 0.5, +10
- 65 to +150
150
200
Unit
Vdc
Vdc
°C
°C
°C
MRF6V2300NR1 MRF6V2300NBR1
1
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