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MRF6S18140HR3 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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◁ |
100
0
1.2288 MHz
â10
Channel BW
10
â20
âIM3 in
+IM3 in
1
â30
1.2288 MHz
1.2288 MHz
Integrated BW
Integrated BW
0.1
â40
ISâ95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
â50
Through 13) 1.2288 MHz Channel Bandwidth
0.01 Carriers. ACPR Measured in 30 kHz Bandwidth @
â60
±885 kHz Offset. IM3 Measured in 1.2288 MHz
0.001
0.0001
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
â70
âACPR in 30 kHz +ACPR in 30 kHz
Integrated BW
Integrated BW
â80
0
2
4
6
8
10
â90
PEAKâTOâAVERAGE (dB)
â100
Figure 14. 2 - Carrier CCDF N - CDMA
â7.5 â6 â4.5 â3 â1.5 0 1.5 3 4.5 6 7.5
f, FREQUENCY (MHz)
Figure 15. 2 - Carrier N - CDMA Spectrum
MRF6S18140HR3 MRF6S18140HSR3
8
RF Device Data
Freescale Semiconductor
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