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MRF6S18140HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
â10
VDD = 28 Vdc, IDQ = 1200 mA
â20 f1 = 1838.75 MHz, f2 = 1841.25 MHz
TwoâTone Measurements
â30
3rd Order
â40
â50
â60
7th Order
5th Order
â70
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
â5
â10
VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA
TwoâTone Measurements,
â15 (f1 + f2)/2 = Center Frequency of 1840 MHz
â20
â25
â30
IM3âU
â35
IM3âL
â40
IM5âU
â45
IM5âL
â50
â55
1
IM7âL
IM7âU
10
100
TWOâTONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
60
Ideal
59
P6dB = 53.90 dBm (245.47 W)
58
57 P3dB = 53.36 dBm (216.77 W)
56
55 P1dB = 52.6 dBm (182.64 W)
54
53
Actual
52
51
VDD = 28 Vdc, IDQ = 1200 mA
50
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 1840 MHz
49
32 33 34 35 36 37 38 39 40 41 42 43 44
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
50
45
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 1838.75 MHz, f2 = 1841.25 MHz
40 2âCarrier NâCDMA, 2.5 MHz Carrier
35 Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
30 @ 0.01% Probability (CCDF)
IM3
â30_C
â20
25_C
â25
â30
85_C
â35
â40
25
â45
20
15 TC = â30_C
10
ηD
5
Gps
ACPR
â50
â55
85_C
25_C â60
â65
0
â70
1
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
MRF6S18140HR3 MRF6S18140HSR3
6
RF Device Data
Freescale Semiconductor
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