MRF6S18140HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
16.8
30
16.6
η_D
29
16.4
28
16.2
16
G_{ps VDD = 28 Vdc, Pout = 29 W (Avg.)}
I_DQ = 1200 mA, 2−Carrier N−CDMA
15.8
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
15.6
@ 0.01% Probability (CCDF)
27
26
−24
0
−30
−4
15.4
15.2
15
ACPR
14.8
IM3
IRL
−36
−8
−42
−12
−48
−16
−54
−20
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P_out = 29 Watts Avg.
16.4
42
16.2
η_D
41
16
40
15.8
15.6
G_ps ^VDD ^{= 28 Vdc, P}out ^{= 60 W (Avg.)}
I_DQ = 1200 mA, 2−Carrier N−CDMA
15.4
2.5 MHz Carrier Spacing, 1.2288 MHz
15.2
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
15
39
38
−12
0
−18
−4
−24
−8
14.8
IM3
IRL
14.6
ACPR
14.4
−30
−12
−36
−16
−42
−20
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P_out = 60 Watts Avg.
19
I_DQ = 1800 mA
18
17 ^{1500 mA}
1200 mA
16
900 mA
15
14 ^{600 mA}
13
1
V_DD = 28 Vdc
f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc
f1 = 1838.75 MHz, f2 = 1841.25 MHz
−20 _{Two−Tone Measurements, 2.5 MHz Tone Spacing}
−30
I_DQ = 600 mA
−40
1800 mA
−50
900 mA
1500 mA
1200 mA
−60
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
5