MRF6S18140HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
18
17 Gps
16
15
T_C = −30_C
25_C
85_C
66
−30_C
25_C
85_C ₅₅
44
33
14
22
13
η_D
12
1
10
V_DD = 28 Vdc
I_DQ = 1200 mA
f = 1840 MHz
100
11
0
400
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
17
I_DQ = 1200 mA
f = 1840 MHz
16
15
14
V_DD = 24 V
28 V
32 V
13
0
100
200
260
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10¹⁰
10⁹
10⁸
10⁷
10⁶
90
110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
7