MRF6P24190HR6 Datasheet, PDF (8/9 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
Dec. 2006
Mar. 2007
Description
• Initial Release of Data Sheet
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Added maximum CW operation limitation and derating values to the Maximum Rating table to prevent a
200°C+ hot wire operating condition, p. 1
• Corrected V_DS to V_DD in the RF test condition voltage callout for V_GS(Q), On Characteristics table, p. 2
• Added frequency to title of schematic, component part layout and typical characteristic curves, p. 3 - 5
• Added Fig. 6, MTTF versus Junction Temperature graph, p. 5
MRF6P24190HR6
8
RF Device Data
Freescale Semiconductor