MRF6P24190HR6 Datasheet, PDF (2/9 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽¹⁾
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage ⁽¹⁾
(V_DS = 10 Vdc, I_D = 200 μAdc)
V_GS(th)
1
2
3
Vdc
Gate Quiescent Voltage ⁽³⁾
(V_DD = 28 Vdc, I_D = 1900 mAdc, Measured in Functional Test)
V_GS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage ⁽¹⁾
(V_GS = 10 Vdc, I_D = 2.2 Adc)
V_DS(on)
0.1
0.21
0.3
Vdc
Dynamic Characteristics ^(1,2)
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
1.5
—
pF
Functional Tests ⁽³⁾ (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1900 mA, P_out = 40 W Avg., f1 = 2300 MHz,
f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G_ps
13
14
16
dB
Drain Efficiency
η_D
22
23.5
—
%
Intermodulation Distortion
IM3
—
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
ACPR
—
- 41
- 38
dBc
Input Return Loss
IRL
—
- 13
—
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
MRF6P24190HR6
2
RF Device Data
Freescale Semiconductor