MRF6P24190HR6 Datasheet, PDF (6/9 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Z_o = 25 Ω
Z_load
f = 2450 MHz
Z_source
f = 2450 MHz
V_DD = 28 Vdc, I_DQ = 1900 mA, P_out = 190 W CW
f
MHz
Z_source
W
Z_load
W
2450
12.72 - j8.48
2.75 - j4.85
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
+ Under
Test
Output
−
Matching
Network
−
Z _source
+
Z _load
Figure 7. Series Equivalent Source and Load Impedance
MRF6P24190HR6
6
RF Device Data
Freescale Semiconductor