MRF6P24190HR6 Datasheet, PDF (5/9 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS — 2450 MHz
14.5
14 Gps
50
14.5
45
14 ^Gps
1900 mA
2100 mA
13.5
I_DQ = 1900 mA
13
f = 2450 MHz
40
13.5
35
13
1500 mA ^{1600 mA 2200 mA}
12.5
30
12.5
12
V_DD = 12 V
11.5
11 ^ηD
30 V
32 V
25
12
32 V
20
11.5
28 V 30 V
15
11
V_DD = 28 V
f = 2450 MHz
10.5
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power
10
500
10.5
10
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
14.5
50
G_ps
14
45
13.5
40
13
35
12.5
30
12
25
11.5
11
η_D
V_DD = 28 V
20
I_DQ = 1900 mA
f = 2450 MHz
15
10.5
10
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency
versus CW Output Power
10⁸
10⁷
10⁶
10⁵
RF Device Data
Freescale Semiconductor
10⁴
90
110 130
150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 190 W CW, and η_D = 46.2%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 6. MTTF versus Junction Temperature
MRF6P24190HR6
5