MRF5S9080NR1 Datasheet, PDF (8/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 990 MHz _{f = 845 MHz}
Z_load
f = 990 MHz
Z_source
Z_o = 10 Ω
f = 845 MHz
V_DD = 26 Vdc, I_DQ = 600 mA, P_out = 80 W CW
f
MHz
Z_source
Ω
Z_load
Ω
845
5.31 - j5.59
1.18 - j0.34
865
6.07 - j4.16
1.09 - j0.29
890
5.05 - j1.99
1.22 - j0.29
920
3.47 - j0.81
1.10 - j0.21
960
2.64 - j0.88
1.05 - j0.15
990
1.89 - j1.14
0.91 - j0.18
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance — 900 MHz
MRF5S9080NR1 MRF5S9080NBR1
8
RF Device Data
Freescale Semiconductor