MRF5S9080NR1 Datasheet, PDF (5/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS - 900 MHz
19.5
80
19
60
η_D
18.5
40
G_ps
18
20
V_DD = 26 Vdc
I_DQ = 600 mA
17.5
0
IRL
17
− 20
16.5
− 40
860 880 900 920 940 960 980 1000 1020
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 80 Watts CW
19.2
60
19
40
η_D
18.8
20
V_DD = 26 Vdc
G_ps
I_DQ = 600 mA
18.6
0
IRL
18.4
− 20
18.2
− 40
860 880 900 920 940 960 980 1000 1020
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 36 Watts CW
20
I_DQ = 900 mA
19
750 mA
18 ^{600 mA}
450 mA
17
300 mA
16
15
V_DD = 26 Vdc
f = 940 MHz
14
1
10
100
1000
P_out, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
20
19
18
17
16
32 V
15
16 V
20 V
24 V ^{28 V}
14
V_DD = 12 V
13
I_DQ = 600 mA
f = 940 MHz
0
50
100
150
200
P_out, OUTPUT POWER (WATTS) CW
Figure 6. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
5