MRF5S9080NR1 Datasheet, PDF (7/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

1.E+09
TYPICAL CHARACTERISTICS
1.E+08
1.E+07
90 100 110 120 130 140 150 160 170 180 190 200 210
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
GSM TEST SIGNAL
− 10
Reference Power
− 20
− 30
− 40
− 50
− 60
− 70
400 kHz
− 80
600 kHz
− 90
− 100
− 110
Center 1.96 GHz
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
200 kHz
400 kHz
600 kHz
Span 2 MHz
Figure 14. EDGE Spectrum
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
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