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MRF5S9080NR1 Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
2
2.8
3.5
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc, Measured in Functional Test)
VGS(Q)
3.5
3.9
4.5
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.27
0.3
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.8
—
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
600
—
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 80 W CW, f = 960 MHz
Power Gain
Gps
17
18.5
20
Drain Efficiency
ηD
55
60
—
Input Return Loss
IRL
—
- 15
-9
μAdc
μAdc
nAdc
Vdc
Vdc
Vdc
pF
pF
dB
%
dB
Pout @ 1 dB Compression Point
P1dB
80
90
—
W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 550 mA, Pout = 36 W Avg.,
869- 894 MHz, 920 - 960 MHz GSM EDGE Modulation
Power Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
42
—
%
Error Vector Magnitude
EVM
—
2.5
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 63
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 77
—
dBc
1. Part is internally matched on input.
MRF5S9080NR1 MRF5S9080NBR1
2
RF Device Data
Freescale Semiconductor