MRF5S21045NR1 Datasheet, PDF (8/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Z_o = 10 Ω
f = 2200 MHz
f = 2000 MHz
Z_load
f = 2000 MHz
Z_source
f = 2200 MHz
V_DD = 28 Vdc, I_DQ = 500 mA, P_out = 10 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2000
2110
8.15 - j5.91
7.07 - j7.32
4.78 - j5.19
4.04 - j4.14
2140
6.28 - j7.71
3.81 - j3.69
2170
5.61 - j7.85
3.69 - j3.39
2200
4.92 - j7.85
3.57 - j3.11
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF5S21045NR1 MRF5S21045NBR1
8
RF Device Data
Freescale Semiconductor