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MRF5S21045NR1 Datasheet, PDF (5/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors | |||
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TYPICAL CHARACTERISTICS
15.2
32
15
ηD
28
14.8
24
14.6
VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA 20
Gps
2âCarrier WâCDMA, 10 MHz Carrier Spacing,
14.4
3.84 MHz Channel Bandwidth
16
14.2
PAR = 8.5 dB @ 0.01%
â 28
â 10
IRL
Probability (CCDF)
14
â 32
â 13
13.8
â 36
â 16
IM3
13.6
â 40
â 19
13.4 ACPR
â 44
â 22
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 10 Watts
14.8
46
14.6
42
14.4
ηD
38
14.2
34
Gps
VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 500 mA
14
2âCarrier WâCDMA, 10 MHz Carrier Spacing,
30
13.8
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
â 18
â8
13.6
IRL
â 22
â 11
13.4
IM3
13.2
ACPR
13
â 26
â 14
â 30
â 17
â 34
â 20
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 20 Watts
17
IDQ = 800 mA
16
650 mA
15
500 mA
14
350 mA
13
200 mA
12 VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two âTone Measurements
11
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
â 10
â 20
IDQ = 200 mA
â 30
800 mA
â 40
650 mA
â 50
350 mA
VDD = 28 Vdc
â60 f1 = 2135 MHz, f2 = 2145 MHz
Two âTone Measurements
500 mA
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1
5
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