MRF5S21045NR1 Datasheet, PDF (2/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 120 μAdc)
V_GS(th)
2
—
3.5
Vdc
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 500 mAdc)
V_GS(Q)
2
3.8
5
Vdc
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 1.2 Adc)
V_DS(on)
0.2
—
0.35
Vdc
Forward Transconductance
(V_DS = 10 Vdc, I_D = 1.2 Adc)
g_fs
—
3.2
—
S
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
0.9
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 500 mA, P_out = 10 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G_ps
13.5
14.5
16.5
dB
Drain Efficiency
η_D
24
25.5
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
Adjacent Channel Power Ratio
ACPR
—
- 39
- 37
dBc
Input Return Loss
IRL
—
- 12
-9
dB
1. Part is internally matched both on input and output.
MRF5S21045NR1 MRF5S21045NBR1
2
RF Device Data
Freescale Semiconductor