MRF19085LR3 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 1990 MHz
Z_load
f = 1930 MHz
f = 1990 MHz
Z_source
f = 1930 MHz
Z_o = 5 Ω
V_DD = 26 V, I_DQ = 850 mA, P_out = 18 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1930
1960
0.75 - j2.50
0.70 - j2.40
1.05 - j1.95
1.10 - j1.85
1990
0.65 - j2.35
1.05 - j1.75
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _source
Z _load
Figure 12. Series Equivalent Source and Load Impedance
MRF19085LR3 MRF19085LSR3
8
RF Device Data
Freescale Semiconductor