MRF19085LR3 Datasheet, PDF(3/12 Page) Freescale Semiconductor, Inc

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MRF19085LR3 Datasheet, PDF (3/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

◁

Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture)

Two - Tone Common - Source Amplifier Power Gain

Gps

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and

1990 MHz, Tone Spacing = 100 kHz)

Two - Tone Drain Efficiency

Î·

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and

1990 MHz, Tone Spacing = 100 kHz)

3rd Order Intermodulation Distortion

IMD

- 31

dBc

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and

1990 MHz, Tone Spacing = 100 kHz)

Input Return Loss

IRL

- 12

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and

1990 MHz, Tone Spacing = 100 kHz)

Pout, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 850 mA, f = 1990 MHz)

P1dB

RF Device Data

Freescale Semiconductor

MRF19085LR3 MRF19085LSR3

▷