MRF19085LR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
0
1.2288 MHz
− 10
Channel BW
− 20
−IM3 in
− 30
1.2288 MHz
Integrated BW
− 40
+IM3 in
1.2288 MHz
Integrated BW
− 50
− 60
− 70
−ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW
Integrated BW
− 80
− 90
− 100
−7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5
f, FREQUENCY (MHz)
6 7.5
Figure 3. 2-Carrier N-CDMA Spectrum
− 20
50
V_DD = 26 Vdc
− 30
I_DQ = 850 mA
f1 = 1960 MHz
40
100 kHz Tone Spacing
− 40
30
− 50
3rd Order
η
20
5th Order
− 60
10
7th Order
− 70
4
0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
Products versus Output Power
30
− 28
V_DD = 26 Vdc, I_DQ = 850 mA
25 ^{f1 = 1958.75 MHz, f2 = 1961.25 MHz}
− 35
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
20
− 42
IM3
15
− 49
G _ps
10
− 56
η
5
− 63
ACPR
0
0.5
1
− 70
10
30
P_out, OUTPUT POWER (WATTS Avg.) N−CDMA
Figure 4. 2-Carrier N - CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
− 20
V_DD = 26 Vdc
−25 _{f = 1960 MHz}
100 kHz Tone Spacing
− 30
− 35
I_DQ = 550 mA
− 40
700 mA
− 45
1150 mA
1000 mA
− 50
850 mA
− 55
4
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation
Distortion versus Output Power and I_DQ
24
0
η
22
− 10
IRL
20 _{VDD = 26 V}
P_out = 18 W Avg.
18 ^IDQ ^{= 850 mA}
16 ^{2−Carrier N−CDMA, 2.5 MHz Carrier Spacing}
1.2288 MHz Channel Bandwidth
14 ^{Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)}
− 20
− 30
IM3
− 40
ACPR _−50
G _ps
12
− 60
1930 1940 1950 1960 1970 1980 1990
f, FREQUENCY (MHz)
Figure 7. 2-Carrier N-CDMA Broadband Performance
14
12
G _ps
V_DD = 26 V
10 I_DQ = 850 mA
f = 1960 MHz
8
6
η
4
2
P _in
0
2
10
P_out, OUTPUT POWER (WATTS)
Figure 8. CW Performance
54
47
40
33
26
19
12
5
100 140
MRF19085LR3 MRF19085LSR3
6
RF Device Data
Freescale Semiconductor