MRF19085LR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
39
38
η
37
IMD
36
− 26
I_DQ = 850 mA
f = 1960 MHz
− 27
100 kHz Tone Spacing
− 28
− 29
35
− 30
34
− 31
33
− 32
24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0
V_DD, DRAIN SUPPLY (V)
Figure 9. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
14.0
I_DQ = 1150 mA
13.5
1000 mA
850 mA
13.0
700 mA
12.5
550 mA
12.0
11.5
4
10
V_DD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
100
P_out, OUTPUT POWER (WATTS)
Figure 10. Two-Tone Power Gain versus Output
Power
40
−5
η
35
− 10
IRL
30
− 15
25 ^VDD ^{= 26 Vdc}
− 20
P_out = 90 W (PEP)
20 ^{IDQ = 850 mA}
− 25
100 kHz Tone Spacing
IMD
15
− 30
G_ps
10
− 35
1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 11. Two-Tone Broadband Performance
RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
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