33797 Datasheet, PDF (8/34 Pages) Freescale Semiconductor, Inc – Four Channel Squib Driver IC

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V ≤ V_DD ≤ 5.25 V; 7.0 V ≤ V_{VFIRE_XX} ≤ 35 V; V_{VDIAG_X} = V_{VFIRE_XX}; FEN 1 = FEN 2
= V_DD; R_{R_LIMIT_X} = 10 kΩ ±1%, R_{R_DIAG} = 10 kΩ ±1%, -40°C ≤ T_A ≤ +85°C, GND = 0 unless otherwise noted. Typical values
noted reflect the approximate parameter means at T_A = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
VFIRE1A / VFIRE2A Current During High Side Safing Sensor Diagnostics
(Command $CO)
Per VFIREXA pin, with High Side Safing Sensor Diagnostic active
I_RRE
µA
260
350
400
VFIRE1B / VFIRE2B Current During High Side Safing Sensor Diagnostics
(Command $CO)
Per VFIREXB pin, with High Side Safing Sensor Diagnostic active
I_RRE
µA
22
32
55
VFIRE1B / VFIRE2B Current During VFIRE Diagnostics (Command $C5)
Either VFIRE!B or VFIRE2B Diagnostic active
I_RRE
mA
0.3
2.0
3.8
VFIRE Quiescent Current - Total
All VFIRE pins measured together, with Diagnostics Off
I_QVFIRETOTAL
90
µA
135
180
Maximum Allowable External Capacitance to Ground ⁽⁹⁾
Per Squib pin SQB_LO and SQB_HI
CS_MAX
–
µF
–
0.12
Maximum Allowable External Resistance to Ground During Firing ⁽⁹⁾
VFIRE_RTN pin to Ground
RS_MAX
–
Ω
–
0.15
Individual FET Driver Thermal Shutdown ^{(9), (10)}
T_SD
160
–
190
C
FET Driver Thermal Shutdown Re-Enable Threshold After Drive Cool-down
(9), (10)
T_REN
90
C
–
110
FET DRIVERS HIGH- AND LOW-SIDE DRIVER TRANSISTOR STATUS /DIAGNOSTICS ($82, $83 COMMANDS)
Voltage Transistor Test Threshold for High-Side Driver Transistor
High-Side Driver Current Limit During High-Side Driver Transistor
Diagnostics
15 V ≤ V_{VFIRE_XX} ≤ 35 V
V_TRANTST1
5.5
6.0
6.5
V
I_TRANTST1
mA
2.0
10
50
Voltage Transistor Test Threshold for Low-Side Driver Transistor
Low-Side Driver Current Limit During Low-Side Driver Transistor
Diagnostics
15 V ≤ V_{VFIRE_XX} ≤ 35 V
V_TRANTST2
1.0
1.4
2.0
V
I_TRANTST2
mA
2.0
10
50
FEN INPUT PIN (FEN_1 AND FEN_2)
Internal Current Pull-Down
I_FEN
-25
-40
-50
µA
Logic Low Level
V_FEN(LO)
0.0
2.5
0.35 x V_DD V
Fire Enable Pin Logic High Level
V_FEN(HI)
0.65 x V_DD
2.5
1.0 x V_DD
V
Notes
9 Guaranteed by design.
10 With a nominal squib load, the FET squib driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms.
The individual squib driver thermal shutdown will not affect other squib driver firing ON times. With a shorted squib load, the FET squib
driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms. When the thermal shutdown limit is
exceeded, the FET driver will turn OFF and the thermal status bit will be set to 1. The FET squib driver can be activated through the
arm / fire command when the TEMP_RENABLE (MIN) is reached (thermal shutdown status “0”). Nominal squib load: 2.15 Ω ± 0.15 Ω.
Shorted squib load: 0.1 Ω.
33797
8
Analog Integrated Circuit Device Data
Freescale Semiconductor