33661 Datasheet, PDF (8/21 Pages) Freescale Semiconductor, Inc – Local Area Network (LIN) Enhanced Physical Interface with Selectable Slew Rate

ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V ≤ V_SUP ≤ 18 V, - 40°C ≤ T_A ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at T_A = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
SLEEP MODE AND WAKE-UP TIMINGS
EN Pin Wake-Up Time ⁽⁹⁾
WAKE Pin Filter Time ⁽¹⁰⁾
LIN Pin Wake-Up Filter Time (LIN Bus Wake-Up) ⁽¹¹⁾
Sleep Mode Delay Time ⁽¹²⁾
EN HIGH-to-LOW
Delay for INH Turning off When Device Enters in Sleep Mode^{(16), (17)}
EN HIGH-to-LOW and INH HIGH-to-LOW
Delay Time Between EN and TXD for Mode Selection ^{(13), (14)}
Delay Time Between First TXD after Device Mode Selection ^{(13), (14)}
FAST BAUD RATE TIMING
Delay Entering Fast Baud Rate Using Toggle Function ⁽¹⁵⁾
EN LOW to EN HIGH
Delay on EN Pin Resetting Fast Baud Rate to Previous Baud Rate ⁽¹⁵⁾
EN LOW to EN HIGH
t _LWUE
—
5.0
15
µs
t _WF
10
—
70
µs
t _WUF
40
70
120
µs
t _SD
µs
50
—
—
t_{SD_INH}
µs
—
—
50
t _{D_MS}
5.0
—
—
µs
t _{D_COM}
50
—
—
µs
t₁
µs
—
—
35
t₂
µs
—
—
5.0
Notes
9 See Figures 7 and 8, 10.
10 See Figures 9 and 10, 10.
11 See Figures 11 and 12, 11.
12 See Figure 14a, 11.
13 See Figures 7 through 12, pp. 10–11.
14 This parameter is guaranteed by design; however, it is not production tested.
15 See Figure 13, 11.
16 No capacitor is connected to the INH pin. Measurement is done between the EN HIGH-to-LOW transition at 80% of INH voltage.
17 See Figure 14b, 11.
33661
8
Analog Integrated Circuit Device Data
Freescale Semiconductor