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| MRF6VP21KHR6 Datasheet, PDF (7/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |||
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Zo = 5 Ω
f = 225 MHz
Zsource
f = 225 MHz
Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
W
Zload
W
225
1.16 + j4.06
2.86 + j1.10
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z source
Z load
Figure 14. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6VP21KHR6
7
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