MRF6VP21KHR6 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

1000
C_iss
TYPICAL CHARACTERISTICS
100
C_oss
100
Measured with ±30 mV(rms)ac @ 1 MHz
10
V_GS = 0 Vdc
10
C_rss
T_J = 200°C
T_J = 150°C
T_J = 175°C
1
0
10
20
30
40
50
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain - Source Voltage
26
80
V_DD = 50 Vdc, I_DQ = 150 mA, f = 225 MHz
25 Pulse Width = 100 μsec, Duty Cycle = 20%
70
24
60
G_ps
23
50
22
40
21
30
20
η_D
20
19
10
10
100
1000 2000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
28
I_DQ = 6000 mA
26
3600 mA
1500 mA
24
750 mA
22
375 mA
20 150 mA
18
10
V_DD = 50 Vdc, f = 225 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
100
1000 2000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
T_C = 25°C
1
1
10
100
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 5. DC Safe Operating Area
65
64
P3dB = 61.33 dBm (1358.31 W)
Ideal
63
P1dB = 60.37 dBm (1088.93 W)
62
61
Actual
60
59
58
57
56
V_DD = 50 Vdc, I_DQ = 150 mA, f = 225 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
55
30 31 32 33 34 35 36 37 38 39 40
P_in, INPUT POWER (dBm) PULSED
Figure 7. Pulsed Output Power versus
Input Power
28
24
20
50 V
V_DD = 30 V _{35 V} ^{40 V 45 V}
16
I_DQ = 150 mA, f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
12
0 200 400 600 800 1000 1200 1400 1600
P_out, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6VP21KHR6
5