MRF6VP21KHR6 Datasheet, PDF (2/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽¹⁾
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
20
μAdc
Drain - Source Breakdown Voltage
(I_D = 300 mA, V_GS = 0 Vdc)
V_(BR)DSS
110
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 50 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
100
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
5
mA
On Characteristics
Gate Threshold Voltage ⁽¹⁾
(V_DS = 10 Vdc, I_D = 1600 μAdc)
Gate Quiescent Voltage ⁽²⁾
(V_DD = 50 Vdc, I_D = 150 mAdc, Measured in Functional Test)
Drain - Source On - Voltage ⁽¹⁾
(V_GS = 10 Vdc, I_D = 4 Adc)
V_GS(th)
1
1.68
3
Vdc
V_GS(Q)
1.5
2.2
3.5
Vdc
V_DS(on)
—
0.28
—
Vdc
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
3.3
—
pF
Output Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
147
—
pF
Input Capacitance
(V_DS = 50 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C_iss
—
506
—
pF
Functional Tests ⁽²⁾ (In Freescale Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W Peak (200 W Avg.), f = 225 MHz,
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
G_ps
22
24
26
dB
Drain Efficiency
η_D
65
67.5
—
%
Input Return Loss
IRL
—
- 15
-9
dB
1. Each side of device measured separately.
2. Measurement made with device in push - pull configuration.
MRF6VP21KHR6
2
RF Device Data
Freescale Semiconductor