MRF6VP21KHR6 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
65
T_C = −30_C
60
25_C
85_C
55
50
V_DD = 50 Vdc
I_DQ = 150 mA
f = 225 MHz
45
Pulse Width = 100 μsec
Duty Cycle = 20%
40
20
25
30
35
40
45
P_in, INPUT POWER (dBm) PULSED
Figure 10. Pulsed Output Power versus
Input Power
26
90
V_DD = 50 Vdc
25 I_DQ = 150 mA
T_C = −30_C
80
f = 225 MHz
24 _{Pulse Width = 100 μsec}
Duty Cycle = 20%
23
70
85_C
60
25_C
22
50
21
40
G_ps
η_D
20
30
19
20
18
10
10
100
1000 2000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power
0.2
0.18
0.16 D = 0.7
0.14
0.12
D = 0.5
0.1
0.08
0.06
0.04
D = 0.1
0.02
0
0.00001 0.0001 0.001
0.01
P_{D t1}
t₂
D = Duty Factor = t₁/t₂
t₁ = Pulse Width
t₂ = Pulse Period
T_J = P_D * Z_JC + T_C
0.1
1
10
RECTANGULAR PULSE WIDTH (S)
Figure 12. Maximum Transient Thermal Impedance
10⁹
10⁸
10⁷
10⁶
90
110 130 150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 50 Vdc, P_out = 1000 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and η_D = 67.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRF6VP21KHR6
6
RF Device Data
Freescale Semiconductor