MRF6VP11KHR6_09 Datasheet, PDF (7/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Z_o = 10 Ω
f = 130 MHz
Z_source
f = 130 MHz
Z_load
V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W Peak
f
MHz
Z_source
W
Z_load
W
130
1.58 + j6.47
4.6 + j1.85
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
-
Matching
Network
-
Z _source
+
Z _load
Figure 15. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6VP11KHR6
7