MRF6VP11KHR6_09 Datasheet, PDF (1/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
• Typical Pulsed Performance at 130 MHz: V_DD = 50 Volts, I_DQ = 150 mA,
P_out = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
ąPower Gain — 26 dB
ąDrain Efficiency — 71%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Designed for Push-Pull Operation
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF6VP11KH
Rev. 6, 12/2009
MRF6VP11KHR6
1.8-150 MHz, 1000 W, 50 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
PART IS PUSH-PULL
RF_inA/V_GSA 3
1 RF_outA/V_DSA
RF_inB/V_GSB 4
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
T_stg
T_C
T_J
Symbol
-0.5, +110
-6.0, +10
-ā65 to +150
150
200
Value ^(1,2)
Vdc
Vdc
°C
°C
°C
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Case Temperature 67°C, 1000 W CW, 100 MHz
Z_θJC
R_θJC
0.03
0.13
°C/W
Ăă1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Ăă2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6VP11KHR6
1