MRF6VP11KHR6_09 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

1000
C_iss
TYPICAL CHARACTERISTICS
100
C_oss
100
Measured with ±30 mV(rms)ac @ 1 MHz
10
10
C_rss
V_GS = 0 Vdc
T_J = 200°C
T_J = 150°C
T_J = 175°C
1
0
10
20
30
40
50
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain-Source Voltage
27
80
26
70
G_ps
25
60
24
50
23
40
η_D
22
30
21
V_DD = 50 Vdc, I_DQ = 150 mA, f = 130 MHz ²⁰
Pulse Width = 100 μsec, Duty Cycle = 20%
20
10
10
100
1000 2000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
32
I_DQ = 6000 mA
3600 mA
28
1500 mA
750 mA
24
375 mA
150 mA
20
V_DD = 50 Vdc, f = 130 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
16
10
100
1000 2000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
T_C = 25°C
1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 5. DC Safe Operating Area
65
64
P3dB = 61.23 dBm (1327.39 W)
Ideal
63
P1dB = 60.57 dBm (1140.24 W)
62
61
Actual
60
59
58
57
V_DD = 50 Vdc, I_DQ = 150 mA, f = 130 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
56
30 31 32 33 34 35 36 37 38 39
P_in, INPUT POWER (dBm) PULSED
Figure 7. Pulsed Output Power versus
Input Power
28
24
20
V_DD = 30 V
35 V
40 V ^{45 V}
50 V
16
I_DQ = 150 mA, f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
12
0 200 400 600 800 1000 1200 1400 1600
P_out, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6VP11KHR6
5