MRF6VP11KHR6_09 Datasheet, PDF (10/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
4
5
6
Date
Jan. 2008
Apr. 2008
July 2008
Sept. 2008
Dec. 2008
July 2009
Dec. 2009
Description
• Initial Release of Data Sheet
• Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS
compliant part number in Table 5, Test Circuit Component Designations and Values, p. 3.
• Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
• Added MTTF CW graph, Fig. 13, MTTF versus Junction Temperature, p. 6
• Added Note to Fig. 4, Capacitance versus Drain-Source Voltage, to denote that each side of device is
measured separately, p. 5
• Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per-side basis, p. 5
• Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect the correct die size and increased
the MTTF factor accordingly, p. 6
• Corrected Fig. 14, MTTF versus Junction Temperature – Pulsed, to reflect the correct die size and
increased the MTTF factor accordingly, p. 6
• Fig. 15, Series Equivalent Source and Load Impedance, corrected Z_source copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration” and Z_load copy to read “Test circuit
impedance as measured from drain to drain, balanced configuration”, p. 7
• Added 1000 W CW thermal data at 100 MHz to Thermal Characteristics table, p. 1
• Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26-RH”, changed R1
Description from “1 KΩ, 1/4 W Axial Leaded Resistor” to “1 KΩ, 1/4 W Carbon Leaded Resistor” and
“CMF601000R0FKEK” part number to “MCCFR0W4J0102A50”, Table 5, Test Circuit Component
Designations and Values, p. 3
• Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect change in Drain Efficiency from
70% to 72%, p. 6
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 20
• Device frequency range improved from 10-150 MHz to 1.8-150 MHz, p. 1
• Reporting of pulsed thermal data now shown using the Z_θJC symbol, Table 2. Thermal Characteristics, p. 1
MRF6VP11KHR6
10
RF Device Data
Freescale Semiconductor