MRF6S9060MR1 Datasheet, PDF (7/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 450 mA, f1 = 880 MHz
−20 ^{f2 = 880.1 MHz, Two−Tone Measurements}
Center Frequency = 880 MHz
−30
−40
−50
3rd Order
−60
5th Order
−70
−80 ^{7th Order}
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 60 W (PEP)
−10 ^IDQ ^{= 450 mA, Two−Tone Measurements}
Center Frequency = 880 MHz
−20
−30
3rd Order
−40
5th Order
−50
−60
7th Order
−70
0.05 0.1
1
10
100 300
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
56
55
54
P3dB = 50 dBm (150 W)
Ideal
53
52
51 _{P1dB = 49.1 dBm (100 W)}
50
49
Actual
48
47
V_DD = 28 Vdc, I_DQ = 450 mA
46
Pulsed CW, 8 μsec(on), 1 msec(off)
45
Center Frequency = 880 MHz
44
22 23 24 25 26 27 28 29 30 31 32 33 34
P_in, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus
Input Power
55
V_DD = 28 Vdc, I_DQ = 450 mA
f = 880 MHz, N−CDMA IS−95 Pilot,
45 _{Sync, Paging, Traffic Codes 8}
Through 13
35
25
G_ps
15
T_C = 25_C
85_C
5
−25
η_D
25_C
−35
ALT1
85_C −45
−30_C
25_C
ACPR
−55
−65
25_C
−30_C
−75
−5
−85
1
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S9060MR1 MRF6S9060MBR1
7