MRF6S9060MR1 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
Replaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V_DD = 28 Volts,
I_DQ = 450 mA, P_out = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc @ 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 500 mA,
P_out = 21 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 500 mA, P_out = 60 Watts,
Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 200°C Capable Plastic Package
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Document Number: MRF6S9060
Rev. 2, 5/2006
MRF6S9060MR1
MRF6S9060MBR1
880 MHz, 14 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S9060MR1
CASE 1337 - 03, STYLE 1
TO - 272 - 2
PLASTIC
MRF6S9060MBR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Value
- 0.5, +68
- 0.5, + 12
227
1.3
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9060MR1 MRF6S9060MBR1
1