MRF6S9060MR1 Datasheet, PDF (15/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

B
E1
2X r1
aaa M C A B
GATE
LEAD
D1
2X b1
aaa M C A
A
DRAIN
LEAD
D
2
DRAIN ID
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
PIN 3
1
NOTE 8
c1
A1
A2
7
E
H
DATUM
PLANE
F
ZONE "J"
E2
Y
E2
VIEW Y - Y
A
Y
C
SEATING
PLANE
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 1337 - 03
ISSUE C
TO - 272- 2
PLASTIC
MRF6S9060MBR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .100 .104 2.54 2.64
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .928 .932 23.57 23.67
D1
.810 BSC
20.57 BSC
E .438 .442 11.12 11.23
E1 .248 .252 6.30 6.40
E2 .241 .245 6.12 6.22
F
.025 BSC
0.64 BSC
b1 .193 .199 4.90 5.05
c1 .007 .011 .18 .28
r1 .063 .068 1.60 1.73
aaa
.004
.10
RF Device Data
Freescale Semiconductor
MRF6S9060MR1 MRF6S9060MBR1
15