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MRF6S9060MR1 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors | |||
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TYPICAL CHARACTERISTICS
22
VDD = 28 Vdc, Pout = 14 W (Avg.), IDQ = 450 mA
21.8
NâCDMA ISâ95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
21.6
Gps
21.4
21.2
IRL
21
40
ηD 35
30
â45
â8
ACPR
â50
â12
â55
â16
20.8
â60
â20
ALT1
20.6
â65
â24
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 14 Watts Avg.
21.6
50
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 450 mA
21.4 NâCDMA ISâ95 Pilot, Sync, Paging, Traffic Codes
48
8 Through 13
ηD
21.2
46
21
Gps
20.8
20.6
44
â32
â4
ACPR
â40
â8
20.4
IRL
20.2
â48
â12
ALT1 â56
â16
20
â64
â20
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg.
23
22
IDQ = 675 mA
550 mA
21 450 mA
350 mA
20
225 mA
19
18
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
TwoâTone Measurements, 100 kHz Tone Spacing
17
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
â10
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
TwoâTone Measurements, 100 kHz Tone Spacing
â20
â30 IDQ = 225 mA
â40 350 mA
â50
â60
1
450 mA
550 mA
10
675 mA
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9060MR1 MRF6S9060MBR1
6
RF Device Data
Freescale Semiconductor
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