MRF6S18100NR1 Datasheet, PDF (7/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 1930 - 1990 MHz
18
V_DD = 28 Vdc
I_DQ = 900 mA
f = 1960 MHz
16
G_ps
14
12
− 30_C
25_C
85_C
T_C = −30_C
η_D
25_C ⁵⁰
85_C ₄₀
30
20
5
V_DD = 28 Vdc
I_DQ = 700 mA
4
3
2
10
10
1
P_out = 61 W Avg.
44 W Avg.
20 W Avg.
8
0
1
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
0
1920
1940
1960
1980
2000
f, FREQUENCY (MHz)
Figure 8. EVM versus Frequency
12
V_DD = 28 Vdc
10
I_DQ = 700 mA
f = 1960 MHz
EDGE Modulation
8
60
T_C = −30_C
50
40
6
25_C
30
η_D
4
20
85_C
2
EVM
10
0
0
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. EVM and Drain Efficiency versus
Output Power
− 50
SR @ 400 kHz
− 55
P_out = 61 W Avg.
− 60
44 W Avg.
− 65
− 70
−75 ^{SR @ 600 kHz}
20 W Avg.
61 W Avg.
V_DD = 28 Vdc
I_DQ = 700 mA
f = 1960 MHz
EDGE Modulation
− 80
− 85
1900
44 W Avg.
20 W Avg.
1920 1940 1960 1980
f, FREQUENCY (MHz)
2000 2020
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
− 40
V_DD = 28 Vdc, I_DQ = 700 mA
−45 f = 1960 MHz, EDGE Modulation
− 50
− 55
85_C
25_C
− 60
T_C = −30_C
− 65
− 70
− 75
0
20
40
60
80
100
P_out, OUTPUT POWER (WATTS)
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
RF Device Data
Freescale Semiconductor
− 55
V_DD = 28 Vdc, I_DQ = 700 mA
−60 ^{f = 1960 MHz, EDGE Modulation}
− 65
− 70
T_C = −30_C
85_C
25_C
− 75
− 80
− 85
0
20
40
60
80
100
P_out, OUTPUT POWER (WATTS)
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
MRF6S18100NR1 MRF6S18100NBR1
7