MRF6S18100NR1 Datasheet, PDF(3/20 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S18100NR1 Datasheet, PDF (3/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 5. Electrical Characteristics (TC = 25Â°C unless otherwise noted (continued)

Characteristic

Symbol

Min

Typ

Max

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 Î¿hm system) VDD = 28 Vdc, IDQ = 700 mA, Pout =

40 W Avg., 1805- 1880 MHz or 1930 - 1990 MHz EDGE Modulation

Power Gain

Gps

Drain Efficiency

Î·D

Error Vector Magnitude

EVM

Spectral Regrowth at 400 kHz Offset

SR1

- 63

Spectral Regrowth at 600 kHz Offset

SR2

- 76

Typical CW Performances (In Freescale GSM Test Fixture, 50 Î¿hm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W,

1805- 1880 MHz

Power Gain

Gps

14.5

Drain Efficiency

Î·D

Input Return Loss

IRL

- 12

Pout @ 1 dB Compression Point

P1dB

110

Unit

% rms

dBc

RF Device Data

Freescale Semiconductor

MRF6S18100NR1 MRF6S18100NBR1

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