MRF6S18100NR1 Datasheet, PDF (13/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 1805 - 1880 MHZ
− 45
− 50
SR @ 400 kHz
− 55
− 60
− 65
− 70
P_out = 60 W Avg.
42 W Avg.
25 W Avg.
V_DD = 28 Vdc
I_DQ = 700 mA
f = 1960 MHz
−75 _{SR @ 600 kHz}
60 W Avg.
42 W Avg.
− 80
25 W Avg.
− 85
1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 22. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
− 45
V_DD = 28 Vdc, I_DQ = 700 mA
f = 1840 MHz, EDGE Modulation
− 50
− 55
T_C = 25_C
− 60
− 65
− 70
− 75
0
20
40
60
80
P_out, OUTPUT POWER (WATTS)
Figure 23. Spectral Regrowth at 400 kHz
versus Output Power
− 60
V_DD = 28 Vdc, I_DQ = 700 mA
f = 1840 MHz, EDGE Modulation
− 65
− 70
− 75
T_C = 25_C
− 80
− 85
0
20
40
60
80
P_out, OUTPUT POWER (WATTS)
Figure 24. Spectral Regrowth at 600 kHz
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
13