MRF6S18100NR1 Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
500
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 330 μAdc)
V_GS(th)
1.6
2
3
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 900 mAdc, Measured in Functional Test)
V_GS(Q)
1.5
2.8
3.5
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 3.3 Adc)
V_DS(on)
—
0.24
—
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3.3 Adc)
g_fs
—
5.3
—
Dynamic Characteristics⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
1.5
—
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, P_out = 100 W, I_DQ = 900 mA, f = 1930- 1990 MHz
Power Gain
G_ps
13
14.5
16
Drain Efficiency
η_D
47
49
—
Input Return Loss
IRL
—
- 12
-9
P_out @ 1 dB Compression Point
1. Part internally matched both on input and output.
P1dB
100
110
—
Unit
°C
Unit
μAdc
μAdc
nAdc
Vdc
Vdc
Vdc
S
pF
dB
%
dB
W
(continued)
MRF6S18100NR1 MRF6S18100NBR1
2
RF Device Data
Freescale Semiconductor