MRF5S9150HR3_09 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
23
70
-30 _C
22
T_C = -30 _C
G_ps
21
60
85_C 50
25_C
20
40
85_C
19
30
18 V_DD = 28 Vdc
I_DQ = 1500 mA
η_D
20
17 f = 880 MHz
10
16
0.1
1
0
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
21
I_DQ = 1500 mA
f = 880 MHz
20
19
18
17
16 V _{20 V}
24 V _{28 V}
32 V
16
V_DD = 12 V
0
50
100
150
200
250
300
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10¹⁰
10⁹
10⁸
10⁷
90 100 110 120 130 140 150 160 170 180 190 200 210
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF5S9150HR3
7