MRF5S9150HR3_09 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
-1 0
V_DD = 28 Vdc, I_DQ = 1500 mA
-2 0 _{f1 = 880 MHz, f2 = 880.1 MHz}
Two-Tone Measurements
-3 0
-4 0
3rd Order
-5 0
-6 0
5th Order
-7 0
-8 0
-90
1
7th Order
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 150 W (PEP)
-1 0 ^IDQ ^{= 1500 mA, Two-Tone Measurements}
(f1 + f2)/2 = Center Frequency of 880 MHz
-2 0
-3 0
3rd Order
-4 0
5th Order
-5 0
7th Order
-60
0.1
1
10
100
TWO-T ONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
61
P6dB = 54.52 dBm (283.14 W)
Ideal
59
57 P3dB = 53.84 dBm (242.1 W)
55 _{P1dB = 52.87 dBm (193.64 W)}
53
Actual
51
49
V_DD = 28 Vdc, I_DQ = 1500 mA
47
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
45
25 27 29 31 33 35 37 39 41
P_in, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus
Input Power
60
V_DD = 28 Vdc, I_DQ = 1500 mA
f = 880 MHz, N-CDMA IS-95
50 _{(Pilot, Sync, Paging, Traffic Codes}
8 Through 13)
40
30
ACPR
20
G_ps
ALT1
10
-30 _C
85_C
-20
25_C _-30
-30 _C
25_C ^-40
85_C
-50
η_D
T_C = -30 _C
-60
85_C ^25_C
-70
0
-80
1
10
100
300
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
MRF5S9150HR3
6
RF Device Data
Freescale Semiconductor