MRF5S9150HR3_09 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
20
32
19.6
G_ps
30
η_D
19.2
28
18.8
26
V_DD = 28 Vdc, P_out = 33 W (Avg.)
18.4
I_DQ = 1500 mA, N-CDMA IS-95
24
18
(Pilot, Sync, Paging, Traffic Codes
-40
-3
8 Through 13)
17.6
-45
-8
17.2
ACPR
16.8
-50
-13
IRL
-55
-18
16.4 _ALT1
-60
-23
16
-65
-28
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ P_out = 33 Watts Avg.
19.5
43
η_D
19
41
18.5
18
17.5
17
16.5
16 ^ACPR
15.5
G_ps
V_DD = 28 Vdc, P_out = 66 W (Avg.)
I_DQ = 1500 mA, N-CDMA IS-95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
IRL
39
37
35
-35
-3
-40
-8
-45
-13
-50
-18
15 _ALT1
-55
-23
14.5
-60
-28
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ P_out = 66 Watts Avg.
22
21 ^{IDQ = 2250 mA}
1875 mA
20
1500 mA
19
1125 mA
18
17 ^{750 mA}
16
1
V_DD = 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
-10
V_DD = 28 Vdc
-20
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements
2250 mA
-30
I_DQ = 750 mA
-40
-50
1875 mA
1500 mA
-60
1125 mA
-70
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S9150HR3
5