MRF5S9150HR3_09 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for N-CDMA base station applications with frequencies from 869
to 960 MHz. Suitable for multicarrier amplifier applications.
• Typical Single-Carrier N-CDMA Performance @ 880 MHz: V_DD = 28 Volts,
I_DQ = 1500 mA, P_out = 33 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
ąPower Gain — 19.7 dB
ąDrain Efficiency — 28.4%
ąACPR @ 750 kHz Offset — -46.8 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF5S9150H-1
Rev. 2, 12/2009
MRF5S9150HR3
880 MHz, 33 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 465-06, STYLE 1
NI-780
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
T_stg
T_C
T_J
Symbol
-0.5, +68
-0.5, +15
-ā65 to +150
150
200
Value ⁽¹⁾
Thermal Resistance, Junction to Case
Case Temperature 80°C, 150 W CW
Case Temperature 76°C, 33 W CW
R_θJC
0.34
0.34
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
ăĂ1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9150HR3
1