MRF5S21150HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 2200 MHz
Z_load
f = 2080 MHz
Z_o = 25 Ω
f = 2080 MHz
f = 2200 MHz
Z_source
V_DD = 28 Vdc, I_DQ = 1300 mA, P_out = 33 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2080
2110
2140
3.05 - j9.66
3.97 - j10.31
4.70 - j11.03
1.02 - j2.94
1.09 - j2.51
1.16 - j2.46
2170
5.45 - j12.41
1.16 - j2.58
2200
6.18 - j13.04
1.02 - j2.55
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S21150HR3 MRF5S21150HSR3
7