MRF5S21150HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
30
V_DD = 28 Vdc, I_DQ = 1300 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2−Carrier W−CDMA, 10 MHz
25 _{Carrier Spacing, 3.84 MHz Channel Bandwidth,}
PAR = 8.5 dB @ 0.01% Probability (CCDF)
20
15
η_D
G_ps
10
−25
−30
IM3
−35
ACPR
−40
−45
5
−50
0
1
10
P_out, OUTPUT POWER (WATTS) AVG. (W−CDMA)
Figure 8. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
−55
100
10⁹
10⁸
10⁷
10⁶
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
0.1
0.01
0.001
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−20
3.84 MHz
−30
Channel BW
−40
−50
−60
−70
−80
−90
−ACPR in +ACPR in
−100 _{−IM3 in}
3.84 MHz BW 3.84 MHz BW
−110 ^{3.84 MHz BW}
−120
−25 −20 −15 −10 −5 0 5 10
f, FREQUENCY (MHz)
+IM3 in
3.84 MHz BW
15 20 25
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5S21150HR3 MRF5S21150HSR3
6
RF Device Data
Freescale Semiconductor