MRF5S21150HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
13
35
G_ps
12
30
η_D
11
25
V_DD = 28 Vdc, P_out = 33 W (Avg.), I_DQ = 1300 mA
10
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
20
9
IRL ^{3.84 MHz Channel Bandwidth, PAR = 8.5 dB}
@ 0.01% Probability (CCDF)
−28
−10
8
−32
−15
7 _IM3
6 ^ACPR
−36
−20
−40
−25
5
−44
−30
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P_out = 33 Watts Avg.
14
I_DQ = 1900 mA
1600 mA
13
1300 mA
12 ^{1000 mA}
11
700 mA
10
1
V_DD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−25
−30
−35
I_DQ = 700 mA
−40
−45
1900 mA
1600 mA
1300 mA
−50
1000 mA
−55
V_DD = 28 Vdc
−60
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
−65
1
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
−25
−30 ^{3rd Order}
−35
−40
5th Order
−45
7th Order
−50
V_DD = 28 Vdc, P_out = 150 W (PEP), I_DQ = 1300 mA
−55
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
58
Ideal
56
P3dB = 53.41 dBm (219.28 W)
54 P1dB = 52.73 dBm (187.5 W)
52
Actual
50
V_DD = 28 Vdc, I_DQ = 1300 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
48
35
37
39
41
43
45
47
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
RF Device Data
Freescale Semiconductor
MRF5S21150HR3 MRF5S21150HSR3
5