MRF5S21090HR3_08 Datasheet, PDF (7/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

f = 2200 MHz
Z_load
f = 2100 MHz
Z_o = 10 Ω
f = 2200 MHz
f = 2100 MHz
Z_source
V_DD = 28 Vdc, I_DQ = 850 mA, P_out = 19 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2100
2120
2160
3.4 -- j5.1
3.2 -- j5.4
3.0 -- j4.4
2.4 -- j2.0
2.2 -- j2.1
2.1 -- j1.9
2200
3.0 -- j4.0
1.8 -- j1.6
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S21090HR3 MRF5S21090HSR3
7